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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ605 2SJ605-S 2SJ605-ZJ 2SJ605-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES * Super low on-state resistance: RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -33 A) RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -33 A) * Low input capacitance ! Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A) * Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg -60 m 20 m 65 m 200 V V A A W W C C A mJ (TO-262) Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 100 1.5 150 -55 to +150 -45 203 IAS EAS ! Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -20 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14650EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP(K) Printed in Japan The mark ! shows major revised points. (c) 2000 2SJ605 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD= -48 V VGS = -10 V ID = -65 A IF = 65 A, VGS = 0 V IF = 65 A, VGS = 0 V di/dt = 100 A / s TEST CONDITIONS VDS = -60 V, VGS = 0 V VGS = m 20 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -33 A VGS = -10 V, ID = -33 A VGS = -4.0 V, ID = -33 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -30 V, ID = -33 A VGS = -10 V RG = 0 -1.5 30 -2.0 59 17 22 4600 820 330 15 14 100 58 87 15 22 1.0 53 110 20 31 MIN. TYP. MAX. -10 m 10 UNIT A A V S m m pF pF pF ns ns ns ns nC nC nC V ns nC ! Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance -2.5 ! Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge ! ! ! Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG VGS = -20 V 0 V - ID VDD BVDSS VDS 50 L VDD ! TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG VDD VDS (-) 90% 90% 10% 10% VGS (-) VGS Wave Form 90% 0 10% IAS VGS (-) 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = -2 mA 50 RL VDD PG. 2 Data Sheet D14650EJ2V0DS 2SJ605 ! TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 0 20 40 60 80 100 120 140 160 100 80 60 40 20 0 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Tch - Channel Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA -1000 ID(pulse) ID - Drain Current - A PW =1 -100 (on ) 10 0 0 s Lim d ite ID(DC) Po Lim wer ite Dis d 1m s -10 R DS 10 sip ati DC s ms on -1 TC = 25C Single Pulse -1 -10 -100 -0.1 -0.1 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-A) = 83.3C/W 10 1 Rth(ch-C) = 1.25C/W 0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14650EJ2V0DS 3 2SJ605 FORWARD TRANSFER CHARACTERISTICS -1000 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -200 ID - Drain Current - A -10 ID - Drain Current - A -100 -150 VGS = -10 V -1 TA = -55C 25C 75C 125C -100 -4.5 V -50 -4.0 V Pulsed -0.1 -1 -2 -3 VDS = -10 V Pulsed -5 -4 0 0 -1 -2 -3 -4 -5 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 Pulsed 30 ID = -65 A 20 ID = -13 A ID = -33 A 10 1000 100 10 TA = 125C 75C 25C -50C VDS = -10 V Pulsed -0.1 -1 -10 ID - Drain Current - A -100 1 0.1 -0.01 0 0 -5 -10 -15 -20 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulsed VGS(off) - Gate Cut-off Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -4.0 VDS = -10 V ID = -1 mA 80 VGS = -4.0 V -4.5 V -10 V -3.0 60 -2.0 40 20 -1.0 0 0 -1 -10 -100 -1000 ID - Drain Current - A -50 0 50 100 150 Tch - Channel Temperature - C 4 Data Sheet D14650EJ2V0DS 2SJ605 RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 Pulsed SOURCE TO DRAIN DIODE FORWARD VOLTAGE -1000 ISD - Diode Forward Current - A Pulsed 40 VGS = -4.0 V -4.5 V -10 V -100 VGS = -10 V -10 -4 V 0V 30 20 10 ID= -33A -50 0 50 100 150 -1 0 -0.1 0 -0.5 -1.0 -1.5 -2.0 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS 1000 VDD = -30 V RG = 0 VGS = -10 V td(off) 100 tf td(on) 10 tr VGS = 0 V f = 1 MHz 10000 Ciss 1000 Coss Crss 100 -0.1 -1 -10 -100 1 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS -60 VDS - Drain to Source Voltage - V SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD -1000 ID = -65 A VDD = -48 V -30 V -12 V VGS -12 VGS - Gate to Source Voltage - V -50 -40 -30 -20 -10 0 -10 -8 -6 -4 IAS - Single Avalanche Current - A -100 IAS = -45 A EAS -10 VDD = -30 V RG = 25 VGS = -20 0 V 100 = 20 3m J VDS -2 0 100 0 20 40 60 80 -1 10 1m 10 m QG - Gate Charge - nC L - Inductive Load - H Data Sheet D14650EJ2V0DS 5 2SJ605 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 VDD = -30 V RG = 25 VGS = -20 0 V IAS -45 A Energy Derating Factor - % 120 100 80 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C 6 Data Sheet D14650EJ2V0DS 2SJ605 ! PACKAGE DRAWINGS(Unit: mm) 1) TO-220AB(MP-25) 2) TO-262(MP-25 Fin Cut) 1.00.5 3.00.3 10.6 MAX. 10.0 TYP. 4.8 MAX. 4.8 MAX. 1.30.2 3.60.2 5.9 MIN. 10 TYP. 1.30.2 15.5 MAX. 4 1 2 3 4 123 1.30.2 6.0 MAX. 1.30.2 12.7 MIN. 12.7 MIN. 8.50.2 0.750.3 2.54 TYP. 0.50.2 2.80.2 0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.80.2 0.750.1 2.54 TYP. 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) TO-263 (MP-25ZJ) 4) TO-220SMD(MP-25Z) Note 10 TYP. 4 4.8 MAX. 1.30.2 10 TYP. 4 4.8 MAX. 1.30.2 1.00.5 8.50.2 1.00.5 1 1.40.2 0.70.2 2.54 TYP. 2 3 1 TY P. P TY . 2 3 1.10.4 5.70.4 3.00.5 8.50.2 P. TY P. .5R TY 0 R 0.8 1.40.2 0.50.2 0.750.3 2.54 TYP. R 0.5 2.54 TYP. 0.8 R 2.54 TYP. 0.50.2 2.80.2 Note This package is produced only in Japan. EQUIVALENT CIRCUIT Drain Remark Gate Body Diode The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Protection Diode Source 2.80.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) Data Sheet D14650EJ2V0DS 7 |
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